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Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC
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Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001)
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Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface
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XPS Analysis of SiO₂/SiC Interface Annealed in Nitric Oxide Ambient
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Surface Studies on Thermal Oxidation on 4H-SiC Epilayer
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Quantified Conditions for Reduction of ESO Contamination During SiC Metalization
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Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization
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A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342XPS Analysis of SiO2/SiC Interface Annealed in...

XPS Analysis of SiO₂/SiC Interface Annealed in Nitric Oxide Ambient

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

399-402

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.399

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Online since:

May 2000

Authors:

H.-F. Li, Sima Dimitrijev, D. Sweatman, H.B. Harrison

Keywords:

Interface, Nitridation, Oxide, X-Ray Photoelectron Spectroscopy (XPS)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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