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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342ESR Study of Delamination in H+ Implanted Silicon...

ESR Study of Delamination in H⁺ Implanted Silicon Carbide

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

813-816

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.813

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Online since:

May 2000

Authors:

Ershad Ali Chowdhury, Toshihide Seki, Tomio Izumi, Hisao Tanaka, Tohru Hara

Keywords:

Defect, Delamination, Electron Spin Resonance, Hydrogen Ion Implantation, SiC On Insulator

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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