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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Dopant-related Complexes in SiC

Dopant-related Complexes in SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

795-798

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.795

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Online since:

May 2000

Authors:

Adam Gali, J. Miró, Peter Deák, Robert P. Devaty, Wolfgang J. Choyke

Keywords:

Boron, Occupancy Level, Phosphorus, Spin Distribution, Theory, Vacancy

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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