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Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
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ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States
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Dopant-related Complexes in SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Donors and Acceptors in SiC-Studies with EPR and...

Donors and Acceptors in SiC-Studies with EPR and ENDOR

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

785-790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.785

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Online since:

May 2000

Authors:

Johann Martin Spaeth

Keywords:

Acceptor, Donors, ENDOR, EPR

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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