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A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC
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Electron Saturated Vertical Velocities in Silicon Carbide Polytypes
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High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC
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Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
p.777

Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes
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Donors and Acceptors in SiC-Studies with EPR and ENDOR
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ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States
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Dopant-related Complexes in SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Electron Beam Induced Current Investigation of...

Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

777-780

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.777

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Online since:

May 2000

Authors:

John Österman, Anders Hallén, Mikael Jargelius, Uwe Zimmermann, Augustinas Galeckas, Bo Breitholtz

Keywords:

Carrier Multiplication, Charge Coupled Devices (CCD), Diffusion Length, EBIC, High Voltage (HV)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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