Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC
p.745
p.745
On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC
p.749
p.749
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC
p.753
p.753
Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy
p.757
p.757
Improved Measurements of High-Field Drift Velocity in Silicon Carbide
p.761
p.761
A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC
p.765
p.765
Electron Saturated Vertical Velocities in Silicon Carbide Polytypes
p.769
p.769
High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC
p.773
p.773
Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
p.777
p.777
Improved Measurements of High-Field Drift Velocity in Silicon Carbide
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
761-764
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Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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