On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

749-752

DOI:

10.4028/www.scientific.net/MSF.338-342.749

Citation:

N. Achtziger et al., "On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC", Materials Science Forum, Vols. 338-342, pp. 749-752, 2000

Online since:

May 2000

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