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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342A Full Band Monte Carlo Study of High Field...

A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

765-768

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.765

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Online since:

May 2000

Authors:

H.-E. Nilsson, E. Bellotti, K.F. Brennan, M. Hjelm

Keywords:

4H-SiC, Charge Transport, Impact Ionization, Monte-Carlo Simulation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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