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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Observation of Deep Levels in SiC by...

Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

757-760

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.757

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Online since:

May 2000

Authors:

Setsuko Kobayashi, Seiji Imai, Yasuaki Hayami, Mitsuhiro Kushibe, Takashi Shinohe, Hideyo Okushi

Keywords:

4H-SiC, 6H-SiC, Deep Level, Isothermal Capacitance Transient Spectroscopy ICTS

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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