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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Theoretical Study of Carrier Freeze-Out Effects on...

Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

745-748

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.745

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Online since:

May 2000

Authors:

A.V. Los, Michael S. Mazzola, Stephen E. Saddow

Keywords:

Differential Admittance, Frequency Dependence, Nitrogen Donor, Schottky Junction

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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