Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

745-748

DOI:

10.4028/www.scientific.net/MSF.338-342.745

Citation:

A.V. Los et al., "Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC", Materials Science Forum, Vols. 338-342, pp. 745-748, 2000

Online since:

May 2000

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$35.00

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