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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Hall Mobility of the Electron Inversion Layer in...

Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

737-740

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.737

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Online since:

May 2000

Authors:

N.S. Saks, S.S. Mani, Anant K. Agarwal, V.S. Hegde

Keywords:

Charge-Sheet Model, Hall-Effect, Interface States (or Traps), Inversion Layer, Mobility, MOS

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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