A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H–and 6H–SiC
p.725
p.725
Theoretical Calculation of the Electron Hall Mobility in n-Type 4H– and 6H-SiC
p.729
p.729
Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation
p.733
p.733
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
p.737
p.737
Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC
p.741
p.741
Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC
p.745
p.745
On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC
p.749
p.749
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC
p.753
p.753
Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy
p.757
p.757
Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
741-744
Citation:
Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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