Paper Titles

High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC
p.773

Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
p.777

Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes
p.781

Donors and Acceptors in SiC-Studies with EPR and ENDOR
p.785

ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States
p.791

Dopant-related Complexes in SiC
p.795

The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC
p.799

The Electronic Structure of the Be Acceptor Centers in 6H-SiC
p.805

Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide
p.809

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342ESR Spectrum of Nitrogen in 6H SiC in the Ground...

ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

791-794

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.791

Citation:

Cite this paper

Online since:

May 2000

Authors:

Ekaterina N. Kalabukhova, S.N. Lukin

Keywords:

Donors, Energy Characteristics, ESR, Photo-ESR, Temperature Dependence

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: