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ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States
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Dopant-related Complexes in SiC
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The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC
p.799

The Electronic Structure of the Be Acceptor Centers in 6H-SiC
p.805

Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide
p.809

ESR Study of Delamination in H⁺ Implanted Silicon Carbide
p.813

Vacancies and their Complexes with H in SiC
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The Carbon Vacancy Pair in 4H and 6H SiC
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Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Electron Paramagnetic Resonance of the Scandium...

Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

809-812

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.809

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Online since:

May 2000

Authors:

Siegmund Greulich-Weber, M. März, Johann Martin Spaeth, E.N. Mokhov, Ekaterina N. Kalabukhova

Keywords:

Acceptor, EPR, Scandium

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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