Paper Titles

ESR Study of Delamination in H⁺ Implanted Silicon Carbide
p.813

Vacancies and their Complexes with H in SiC
p.817

The Carbon Vacancy Pair in 4H and 6H SiC
p.821

Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide
p.825

Physics of SiC Processing
p.831

Polishing and Surface Characterization of SiC Substrates
p.837

Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering
p.841

Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers
p.845

Nuclear Transmutation Doping of Phosphorus into 6H-SiC
p.849

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Physics of SiC Processing

Physics of SiC Processing

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

831-836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.831

Citation:

Cite this paper

Online since:

May 2000

Authors:

Gerhard Pensl, Valeri V. Afanas'ev, M. Bassler, Thomas Frank, Michael Laube, Michael Weidner

Keywords:

Boron Diffusion, Degradation of SiC MOS Capacitors, Doping by Ion Implantation, Implantation-Induced Defect Centers, Negative-Bias-Temperature Instability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: