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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Nuclear Transmutation Doping of Phosphorus into...

Nuclear Transmutation Doping of Phosphorus into 6H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

849-852

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.849

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Online since:

May 2000

Authors:

S. Tamura, Tsunenobu Kimoto, Hiroyuki Matsunami, M. Okada, S. Kanazawa, I. Kimura

Keywords:

Annealing, Deep Level Analysis, Electrical Characteristics, Nuclear Transmutation Doping, Phosphorus, PL, RBS

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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