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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Relationship between Donor Activation and Defect...

Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

857-860

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.857

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Online since:

May 2000

Authors:

Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, Masahito Yoshikawa, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama, L. Bouwhuis, Shoichiro Tanigawa, Thomas Frank, Gerhard Pensl

Keywords:

Electron Concentration, Hot-Implantation, Positron Annihilation Spectroscopy, Vacancy Type Defects

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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