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Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide
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Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers
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Nuclear Transmutation Doping of Phosphorus into 6H-SiC
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Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Damage-Free Surface Modification of Hexagonal...

Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

845-848

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.845

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Online since:

May 2000

Authors:

T.C. Chandler, Jr., M.B. Lari, Tangali S. Sudarshan

Keywords:

Damage, Etching, Lapping, Polishing, Subsurface Damage

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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