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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Radiation Defects and Doping of SiC with...

Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

853-856

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.853

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Online since:

May 2000

Authors:

Hans Heissenstein, Horst Sadowski, Christian Peppermüller, Reinhard Helbig

Keywords:

C-V, Defect, Hall-Effect, LTPL, Neutron, Phosphorus

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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