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High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Excimer Laser Annealing of Ion-Implanted...

Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

873-876

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.873

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Online since:

May 2000

Authors:

Y. Hishida, Masanori Watanabe, Koichi Nakashima, Osamu Eryu

Keywords:

Electrical Conductivity, Excimer Laser, Ion Implantation, Laser Annealing, Photoluminescence (PL), Rutherford Backscattering

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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