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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342High Concentration Doping of 6H-SiC by Ion...

High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

877-880

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.877

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Online since:

May 2000

Authors:

D. Panknin, H. Wirth, W. Anwand, Gerhard Brauer, Wolfgang Skorupa

Keywords:

Aluminum (Al), Annealing, Electrical Activation, Ion Implantation, Nitrogen

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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