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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Consequences of High-Dose, High Temperature Al+...

Consequences of High-Dose, High Temperature Al⁺ Implantation in 6H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

881-884

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.881

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Online since:

May 2000

Authors:

J. Stoemenos, Béla Pécz, V. Heera

Keywords:

Al₄C₃ precipitates, Aluminium Implantation in 6H-SiC

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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