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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and...

Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

587-590

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.587

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Online since:

September 2003

Authors:

N. Rodriguez, M. D'Angelo, V.Yu. Aristov, P. Soukiassian, A. Lescuras, C. Crotti, M. Pedio, P. Perfetti

Keywords:

Growth Mode, Metal/SiC Interface, Photoemission Spectroscopy, Silver, Synchrotron Radiation (XRD), Wide Band Gap Semiconductor

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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