Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces
p.587
p.587
Modelling the Formation of Nano-Sized SiC on Si
p.591
p.591
Nanostructure Formation on a Surface of 6H-SiC by Laser Radiation
p.595
p.595
Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) Surfaces
p.599
p.599
Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
p.605
p.605
Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC
p.609
p.609
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
p.613
p.613
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
p.617
p.617
Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes
p.621
p.621
Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
Abstract:
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Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
605-608
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Online since:
September 2003
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© 2003 Trans Tech Publications Ltd. All Rights Reserved
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