Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

613-616

DOI:

10.4028/www.scientific.net/MSF.433-436.613

Citation:

J. Senzaki et al., "Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face", Materials Science Forum, Vols. 433-436, pp. 613-616, 2003

Online since:

September 2003

Export:

Price:

$38.00

In order to see related information, you need to Login.