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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Effective Normal Field Dependence of Inversion...

Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

613-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.613

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Online since:

September 2003

Authors:

Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki, Kenji Fukuda

Keywords:

4H-SiC(11-20)Face, Effective Normal Field, Inversion Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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