Paper Titles

Effects of Initial Nitridation on the Characteristics of SiC-SiO₂ Interfaces
p.583

Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces
p.587

Modelling the Formation of Nano-Sized SiC on Si
p.591

Nanostructure Formation on a Surface of 6H-SiC by Laser Radiation
p.595

Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) Surfaces
p.599

Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
p.605

Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC
p.609

Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
p.613

Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
p.617

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Theoretical Investigation of Adsorption of...

Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) Surfaces

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

599-604

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.599

Citation:

Cite this paper

Online since:

September 2003

Authors:

Jenny Olander, Karin Larsson

Keywords:

Ab Initio Calculation, Nitrogen Doping, Silicon Carbide Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: