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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436SiC Delta-Doped-Layer Structures and DACFET

SiC Delta-Doped-Layer Structures and DACFET

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

629-632

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.629

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Online since:

September 2003

Authors:

Kunimasa Takahashi, Osamu Kusumoto, Masao Uchida, Kenya Yamashita, Makoto Kitabatake

Keywords:

Channel Mobility, Delta-Doped Accumulation Channel MOSFET (DACFET), Delta-Doping, On-Resistance, Pulse-Doping

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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