Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

641-644

DOI:

10.4028/www.scientific.net/MSF.433-436.641

Citation:

M. S. Janson et al., "Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy ", Materials Science Forum, Vols. 433-436, pp. 641-644, 2003

Online since:

September 2003

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