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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Vacancy-Type Defect Distributions of 11B-, 14N-...

Vacancy-Type Defect Distributions of ¹¹B-, ¹⁴N- and ²⁷Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

641-644

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.641

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Online since:

September 2003

Authors:

Martin S. Janson, J. Slotte, Andrej Yu. Kuznetsov, Kimmo Saarinen, Anders Hallén

Keywords:

Defect, Ion Implantation, Positron Annihilation Spectroscopy

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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