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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Porous SiC: New Applications through In- and Out-...

Porous SiC: New Applications through In- and Out- Dopant Diffusion

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

657-660

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.657

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Online since:

September 2003

Authors:

Marina G. Mynbaeva, N.I. Kuznetsov, A. Lavrent'ev, K. Mynbaev, J.T. Wolan, B. Grayson, V. Ivantsov, Alexander Syrkin, A. Fomin, Stephen E. Saddow

Keywords:

Diffusion, Doping, Gallium Nitride (GaN), Magnesium, Porous SiC, Semi-Insulating SiC

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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