Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

661-664

Citation:

G. H. Song et al., "Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs", Materials Science Forum, Vols. 433-436, pp. 661-664, 2003

Online since:

September 2003

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[2] S. Y. Han, N. K. Kim, E. D. Kim and J. L. Lee: Mater. Sci. Forum Vol. 389-393 (2002), p.897.

[3] O. A. Agueev, A. M. Svetlichnyi and R. N. Razgonov: Mater. Sci. Forum Vol. 389-393 (2002), p.901.