Paper Titles
Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
p.645
First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping
p.649
Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC
p.653
Porous SiC: New Applications through In- and Out- Dopant Diffusion
p.657
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
p.661
Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
p.665
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
p.669
Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
p.673
Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN
p.677

Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

661-664

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.661

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Online since:

September 2003

Authors:

Geun Ho Song, Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Eun Dong Kim

Keywords:

C-V Characteristics, Gate Oxide, Nickel Gate, Ohmic Contact, Power MOSFET, Rapid Thermal Annealing (RTA)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S. Wolf: Silicon Processing for the VLSI Era (Lattice Press, USA 1990).

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[2] S. Y. Han, N. K. Kim, E. D. Kim and J. L. Lee: Mater. Sci. Forum Vol. 389-393 (2002), p.897.

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[3] O. A. Agueev, A. M. Svetlichnyi and R. N. Razgonov: Mater. Sci. Forum Vol. 389-393 (2002), p.901.

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