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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Damage Distributions Induced by Channeling...

Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

645-648

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.645

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Online since:

September 2003

Authors:

Z. Zolnai, N.Q. Khánh, T. Lohner, A. Ster, E. Kótai, I. Vickridge, J. Gyulai

Keywords:

Backscattering Spectrometry BS, Channeling, Ion Implantation, Radiation Defect, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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