Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

637-640

DOI:

10.4028/www.scientific.net/MSF.433-436.637

Citation:

E. V. Kalinina et al., "Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers", Materials Science Forum, Vols. 433-436, pp. 637-640, 2003

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September 2003

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[1] E. Kalinina, G. Kholujanov, Yu. Gol'dberg, T. Blank, G. Onushkin, A. Strel'chuk, G. Violina, V. Kossov, R. Yafaev, A. Hallén, A. Konstantinov: Materials Science Forum Vols. 389-393, (2002), p.835.

DOI: 10.4028/www.scientific.net/msf.389-393.835

[2] E. Kalinina, G. Kholujanov, V. Solov'ev, A. Strel'chuk, V. Kossov, R. Yafaev, A. Kovarskiy, A. Shchukarev, S. Obyden, G. Saparin, P. Ivannikov, A. Hallen, A. Konstantinov: Appl. Surf. Sci., vol. 184, (2001), p.323.

DOI: 10.1016/s0169-4332(01)00682-1

[3] E. Kalinina, G. Kholujanov, V. Solov'ev, A. Strel'chuk, A. Zubrilov, V. Kossov, R. Yafaev, A.P. Kovarski, A. Hallén, A. Konstantinov, S. Karlsson, C. Adås, S. Rendakova, V. Dmitriev, Appl. Phys. Lett. vol. 77, � 19 (2000), p.6.

DOI: 10.1063/1.1320868

[4] A. Goetzberger and W. Shockley: J. Appl. Phys. Vol. 31, (1960), p.1821.

[5] T.M. Buck, K.A. Pickar, J.M. Poate, and C.M. Hsich: Appl. Phys. Lett. vol. 21, (1972), p.486.

[6] H. Wong, N.W. Cheung, P.K. Chu: Appl. Phys. Lett. Vol. 52, (1988), p.889.

[7] V.A. Gydkov, G.A. Krisov, V.V. Makarov: Phys. and Tech. Semiconductors vol. 18, (1984), p.1098.

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