Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC

Servane Blanqué; R. Pérez; Marcin Zielinski; Julien Pernot; Narcis Mestres; Jordi Pascual; Philippe Godignon; Jean Camassel

doi:10.4028/www.scientific.net/MSF.433-436.653

Paper Titles

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
p.637

Vacancy-Type Defect Distributions of ¹¹B-, ¹⁴N- and ²⁷Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy
p.641

Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
p.645

First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping
p.649

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N⁺ and P⁺ Ions in 6H-SiC
p.653

Porous SiC: New Applications through In- and Out- Dopant Diffusion
p.657

Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
p.661

Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
p.665

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
p.669

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Quantitative Evaluation of Implantation Damage and...

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N⁺ and P⁺ Ions in 6H-SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

653-656

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.653

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Online since:

September 2003

Authors:

Servane Blanqué, R. Pérez, Marcin Zielinski, Julien Pernot, Narcis Mestres, Jordi Pascual, Philippe Godignon, Jean Camassel

Keywords:

Annealing Rates, Implantation Damage, Micro-Raman Spectroscopy, Nitrogen Co-Doping, Phosphorus Co-Doping, Recovery Rate, Sheet Resistance, SIMS

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References

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