Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

673-676

DOI:

10.4028/www.scientific.net/MSF.433-436.673

Citation:

F. Moscatelli et al., "Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data", Materials Science Forum, Vols. 433-436, pp. 673-676, 2003

Online since:

September 2003

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