Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

Francesco Moscatelli; Andrea Scorzoni; Antonella Poggi; G.C. Cardinali; Roberta Nipoti

doi:10.4028/www.scientific.net/MSF.433-436.673

Paper Titles

Porous SiC: New Applications through In- and Out- Dopant Diffusion
p.657

Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
p.661

Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
p.665

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
p.669

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
p.673

Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN
p.677

Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
p.681

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
p.685

The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
p.689

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Al/Ti Ohmic Contacts to p-Type Ion-Implanted...

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

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Materials Science Forum (Volumes 433-436)

Pages:

673-676

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.673

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Online since:

September 2003

Authors:

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, G.C. Cardinali, Roberta Nipoti

Keywords:

Contact Resistance, Current Crowding, Ohmic Contact, p-Type SiC

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