Paper Titles

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
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Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
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Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN
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Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
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Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
p.685

The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
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Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
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Diffusion-Welded Al Contacts to p-Type SiC
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Thermal Etching of 6H-SiC (11-20) Substrate Surface
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Suppression of Leakage Current Increase of 4H-SiC...

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

685-688

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.685

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Online since:

September 2003

Authors:

Syunsuke Izumi, Hiroyuki Fujisawa, Takeshi Tawara, Katsunori Ueno, M. Hiraoka

Keywords:

High Temperature Annealing, Leakage Current, Surface Morphology

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.4028/www.scientific.net/msf.389-393.1141

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