Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

685-688

Citation:

S. Izumi et al., "Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement", Materials Science Forum, Vols. 433-436, pp. 685-688, 2003

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September 2003

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[1] T. Tsuji, S. Izumi, A. Ueda, H. Fujisawa, K. Ueno, H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi : Materials Science Forum Vol. 389-393(2002), p.1141.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1297

[2] M. A. Capano, S. Ryu, M. R. Melloch, J. A. Cooper, Jr., and M. R. Buss : J. Electron. Mater. Vol. 27(1998), p.370.

[3] M. A. Capano, S. Ryu, J. A. Cooper, Jr., M. R. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell, and D. E. Walker, Jr. : J. Electron. Mater. Vol. 28(1999), p.214.

[4] H. Tanaka, S. Tanimoto, M. Yamanaka and M. Hoshi : Materials Science Forum Vol. 389-393(2002), p.803.

[5] S. Ezaki, M. Saito, and K. Ishino : Materials Science Forum Vol. 389-393(2002), p.155.

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