The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

689-692

DOI:

10.4028/www.scientific.net/MSF.433-436.689

Citation:

N.O.V. Plank et al., "The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 433-436, pp. 689-692, 2003

Online since:

September 2003

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$35.00

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