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Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
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Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
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The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
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Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
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Diffusion-Welded Al Contacts to p-Type SiC
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Thermal Etching of 6H-SiC (11-20) Substrate Surface
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436The Effect of Plasma Etching on the Electrical...

The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

689-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.689

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Online since:

September 2003

Authors:

N.O.V. Plank, Liudi Jiang, A.M. Gundlach, Rebecca Cheung

Keywords:

ICP Etching, Ideality Factor, Schottky Diode, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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