Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC

Nicolas Camara; George  Konstantinidis; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.433-436.693

Paper Titles

Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN
p.677

Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
p.681

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
p.685

The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
p.689

Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
p.693

Diffusion-Welded Al Contacts to p-Type SiC
p.697

Thermal Etching of 6H-SiC (11-20) Substrate Surface
p.701

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
p.705

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
p.709

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Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC

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Materials Science Forum (Volumes 433-436)

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693-696

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.693

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September 2003

Authors:

Nicolas Camara, George Konstantinidis, Konstantinos Zekentes

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Laser Interferometry, Optical Emission Spectroscopy, Reactive Ion Etching

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