Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

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693-696

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N. Camara et al., "Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC ", Materials Science Forum, Vols. 433-436, pp. 693-696, 2003

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September 2003

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