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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Characteristics of Ni Schottky Contacts on...

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

709-712

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.709

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Online since:

September 2003

Authors:

L. Kasamakova-Kolaklieva, Rositza Yakimova, Roumen Kakanakov, A. Kakanakova-Georgieva, Mikael Syväjärvi, Erik Janzén

Keywords:

Epilayer Compensation, Recombination, Schottky Contact, Thermionic Emission

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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