Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

709-712

Citation:

L. Kasamakova-Kolaklieva et al., "Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers", Materials Science Forum, Vols. 433-436, pp. 709-712, 2003

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September 2003

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