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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Surface Structure of Electrochemically Etched...

Surface Structure of Electrochemically Etched α-SiC Substrates

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

717-720

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.717

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Online since:

September 2003

Authors:

Hideno Mikami, A. Umetani, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Anisotropy, Micropipe, Step Bunching, Wet Etching

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[5] W. Choyke, H. Matsunami and G. Pensl : Sillicon Carbide, John wiley & Sons, New York, (1997). Fig. 7. (a) The AFM image [23µmغ] in etched 4H-SiC and (b) cross sectional profile of A-A.