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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Influence of Material Properties on Wide-Bandgap...

Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

731-736

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.731

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Online since:

September 2003

Authors:

Erwan Morvan, Alexandre Kerlain, Christian Dua, Christian Brylinski

Keywords:

Microwave Power Device, Silicon Carbide (SiC), Wide Bandgap Device

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] St.G. Müller, M.F. Brady, W.H. Brixius, G. Fechko R.C. Glass, and al. Proceedings of IEDM 2001 conference.

[2] A. S. Royet, T. Ouisse, B. Cabon, O. Noblanc, C. Arnodo, and C. Brylinski, IEEE transaction On Electron devices, Vol. 47, n°11, (2000).

DOI: 10.1109/16.877187

[3] Special issue on Wide Bandgap Semiconductor Devices Proceedings of the IEEE, June 2002, vol. 90, N°6.