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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Passivation Effect on Channel Recessed 4H-SiC...

Passivation Effect on Channel Recessed 4H-SiC MESFETs

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

749-752

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.749

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Online since:

September 2003

Authors:

Ho Young Cha, Christopher I. Thomas, Goutam Koley, Lester F. Eastman, Michael G. Spencer

Keywords:

4H-SiC MESFET, Channel Recess, Passivation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] K.P. Hilton, M.J. Uren, D.G. Hayes, P. Wilding, and B. Smith, IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (2000), p.67.

DOI: 10.1109/edmo.2000.919031

[2] H. Cha, C. Thomas, G. Koley, H. Kim, L. F. Eastman, and M. G. Spencer, IEEE Lester Eastman conference on High Performance Devices (2002), to be published.

DOI: 10.1109/lechpd.2002.1146734

[3] O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, Materials Science & Engineering, B61, 62 (1999) p.339.

DOI: 10.1016/s0921-5107(98)00529-7

[4] G. Koley and M. G. Spencer, Journal of Applied Physics, vol. 90, No. 1 (2001), p.337.