Passivation Effect on Channel Recessed 4H-SiC MESFETs

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

749-752

DOI:

10.4028/www.scientific.net/MSF.433-436.749

Citation:

H. Y. Cha et al., "Passivation Effect on Channel Recessed 4H-SiC MESFETs", Materials Science Forum, Vols. 433-436, pp. 749-752, 2003

Online since:

September 2003

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[1] K.P. Hilton, M.J. Uren, D.G. Hayes, P. Wilding, and B. Smith, IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (2000), p.67.

DOI: 10.1109/edmo.2000.919031

[2] H. Cha, C. Thomas, G. Koley, H. Kim, L. F. Eastman, and M. G. Spencer, IEEE Lester Eastman conference on High Performance Devices (2002), to be published.

DOI: 10.1109/lechpd.2002.1146734

[3] O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, Materials Science & Engineering, B61, 62 (1999) p.339.

[4] G. Koley and M. G. Spencer, Journal of Applied Physics, vol. 90, No. 1 (2001), p.337.

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