Modelling of Radiation Response of p-Channel SiC MOSFETs

Kin Kiong Lee; Takeshi Ohshima; Hisayoshi Itoh

doi:10.4028/www.scientific.net/MSF.433-436.761

Paper Titles

RF Characteristics of Short-Channel SiC MESFETs
p.745

Passivation Effect on Channel Recessed 4H-SiC MESFETs
p.749

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
p.753

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
p.757

Modelling of Radiation Response of p-Channel SiC MOSFETs
p.761

Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
p.765

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
p.769

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
p.773

Optimisation of a 4H-SiC Enhancement Mode Power JFET
p.777

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Modelling of Radiation Response of p-Channel SiC MOSFETs

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Materials Science Forum (Volumes 433-436)

Pages:

761-764

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.761

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Online since:

September 2003

Authors:

Kin Kiong Lee, Takeshi Ohshima, Hisayoshi Itoh

Keywords:

Gamma-Ray Irradiation, Interface States (or Traps), Mobility Degradation, Oxide-Trapped Charge

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References

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