Paper Titles

A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
p.737

Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
p.741

RF Characteristics of Short-Channel SiC MESFETs
p.745

Passivation Effect on Channel Recessed 4H-SiC MESFETs
p.749

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
p.753

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
p.757

Modelling of Radiation Response of p-Channel SiC MOSFETs
p.761

Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
p.765

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
p.769

HomeMaterials Science ForumMaterials Science Forum Vols. 433-4364H-SiC Lateral RESURF MOSFET with a Buried Channel...

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

753-756

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.753

Citation:

Cite this paper

Online since:

September 2003

Authors:

Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda

Keywords:

Blocking Voltage, Buried Channel, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), On-Resistance, RESURF

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] K. Asano, Y. Sugawara, S. Ryu, R. Signgh, J. Palmour, T. Hayashi, and D. Takayama, in Proc. Int. Symp. Power Semiconductor Devices and ICs, Osaka, Japan, June 4-7, (2001).

[2] Y. Li, J.A. Cooper, M.A. Capano, Mater. Sci. Forum, Vol. 389-393(2002) p.1191.

[3] S.H. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams, IEEE Device Electron Lett. Vol. 23(2002), p.321.

DOI: 10.1109/led.2002.1004222

[4] N.S. Saks, S.S. Mani, A.K. Agarwal, and M.G. Ancona, IEEE Electron Device Lett. Vol. 20(1999), p.431.

[5] K. Chatty, S. Banerjee, T.P. Chow, and R.J. Gutmann, IEEE Electron Device Lett. Vol. 21(2000), p.356.

[6] S. Banerjee, K. Chatty, T.P. Chow, and R.J. Gutmann, IEEE Electron Device Lett. Vol. 22(2001), p.209.

[7] S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda, and K. Arai, IEEE Electron Device Lett., 22(2001), p.272.

DOI: 10.1109/55.924839

[8] S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda, and K. Arai, Mater. Sci. Forum, Vol. 389-393(2002) p.1069.

DOI: 10.4028/www.scientific.net/msf.389-393.1069