4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

753-756

Citation:

S. Suzuki et al., "4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure", Materials Science Forum, Vols. 433-436, pp. 753-756, 2003

Online since:

September 2003

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DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1069

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