4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

769-772

DOI:

10.4028/www.scientific.net/MSF.433-436.769

Citation:

D. Peters et al., "4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications", Materials Science Forum, Vols. 433-436, pp. 769-772, 2003

Online since:

September 2003

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$35.00

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