4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

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769-772

Citation:

D. Peters et al., "4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications", Materials Science Forum, Vols. 433-436, pp. 769-772, 2003

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September 2003

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