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HomeMaterials Science ForumMaterials Science Forum Vols. 433-4364H-SiC Power MOSFET Blocking 1200V with a Gate...

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

769-772

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.769

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Online since:

September 2003

Authors:

Dethard Peters, Adolf Schöner, Peter Friedrichs, Dietrich Stephani

Keywords:

4H-SiC, Channel Mobility, Nitridation, Nitrous Oxide, Power MOSFET

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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