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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Power Amplification in UHF Band Using SiC RF Power...

Power Amplification in UHF Band Using SiC RF Power BJTs

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

785-788

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.785

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Online since:

September 2003

Authors:

Anant K. Agarwal, Craig Capell, Binh Phan, James Milligan, John W. Palmour, Jerry Stambaugh, Howard Bartlow, Ken Brewer

Keywords:

Bipolar Junction Transistor (BJT), Micro-Wave, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] S-H. Ryu et al., IEEE Electron Device Letters, vol. 22, (2001) pp.124-126.

[2] Y. Tang et al., IEEE Electron Device Letters, vol. 22, (2001) pp.119-122.