Paper Titles

Optimisation of a 4H-SiC Enhancement Mode Power JFET
p.777

Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors
p.781

Power Amplification in UHF Band Using SiC RF Power BJTs
p.785

Demonstration of Monolithic Darlington Transistors in 4H-SiC
p.789

High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration
p.793

Design and Technology Considerations for a RF BJT in SiC
p.797

Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate
p.801

SiC Power Devices: How to be Competitive towards Si-Based Solutions?
p.805

SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations
p.813

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436High-Voltage Modular Switch Based on SiC VJFETs -...

High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

793-796

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.793

Citation:

Cite this paper

Online since:

September 2003

Authors:

Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner, Karl Otto Dohnke, Dietrich Stephani

Keywords:

Fast Switching, High Voltage (HV), Junction Field Effect Transistor (JFET), Serial Connection, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: