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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Demonstration of Monolithic Darlington Transistors...

Demonstration of Monolithic Darlington Transistors in 4H-SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

789-792

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.789

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Online since:

September 2003

Authors:

Yi Tang, T. Paul Chow

Keywords:

4H-SiC, Bipolar Transistors, Current Gain, Darlington Transistors

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] Y. Wang, W. Xie, J.A. Cooper, Jr., M.R. Melloch and J.W. Palmour, Silicon Carbide and Related Materials Conf, Kyoto, Japan, (1995), p.809.

[2] S-H. Ryu, A.K. Agarwal, R. Singh, and J.W. Palmour, 58th Annual Device Research Conference, Denver, CO, June, (2000).

[3] C. Huang, J. A. Cooper, International Symposium on Power Semiconductor Devices and ICs, Santa Fe, NM, June, (2002).

[4] Y. Tang, J.B. Fedison and T.P. Chow, IEEE Electron Device Letters, vol. 22 (2001), p.119.

[5] Y. Tang J.B. Fedison and T.P. Chow, IEEE Electron Device Letters, vol. 23 (2002), p.16.

[2] [4] [6] [8] [10] 2 2. 5 3 3. 5 4 4. 5 5 5. 5 T1 T2 Current Gain V (V)BE.

[10] [20] [30] [40] [50] [60] [70] [80] [90] 0 50 100 150 200 Temperature( C) o Current Gain Figure. 5 Common emitter current gain of single-stage BJTs Figure. 6 Temperature dependence of current gain.