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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Simulation and Measurement of Switching...

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

773-776

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.773

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Online since:

September 2003

Authors:

Sang-Mo Koo, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

Keywords:

Junction Field Effect Transistor (JFET), Simulation, Switching

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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