Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

773-776

DOI:

10.4028/www.scientific.net/MSF.433-436.773

Citation:

S.-M. Koo et al., "Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs", Materials Science Forum, Vols. 433-436, pp. 773-776, 2003

Online since:

September 2003

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$35.00

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