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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Electro-Thermal Simulations and Measurement of...

Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

781-784

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.781

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Online since:

September 2003

Authors:

W. Liu, Erik Danielsson, Carl Mikael Zetterling, Mikael Östling

Keywords:

Bipolar Transistor, Electro-Thermal Simulation, Junction Temperature

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[2] Y. Luo, L. Fursin and J. H. Zhao, Electron. Lett. Vol. 36 (2000), pp.1496-1497.

[3] S. P. Marsh, IEEE Trans. Electron Devices Vol. 47 (2000), pp.288-291.

[4] E. A. Burgemeister, W. v. Muench and E. Pettenpaul, Jpn. J. Appl. Phys. Vol. 50 (1979), pp.5790-5794.