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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Design and Technology Considerations for a RF BJT...

Design and Technology Considerations for a RF BJT in SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

797-800

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.797

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Online since:

September 2003

Authors:

Mietek Bakowski, Per Ericsson, Chris I. Harris, Andrey O. Konstantinov, Susan Savage, Adolf Schöner

Keywords:

Bipolar Junction Transistor (BJT), RF, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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